december 2012 hvm-1065-b 1 < hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules CM800HC-90R ? i c 800a ? v ces 4500v ? 1-element in a pack ? insulated type ? lpt-igbt / soft recovery diode ? alsic baseplate application traction drives, high reliability c onverters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 2 maximum ratings symbol item conditions ratings unit v ge = 0v, t j = -40?+125c 4500 v ces collector-emitter voltage v ge = 0v, t j = ? 50c 4400 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 85c 800 a i crm collector current pulse (note 1) 1600 a i e dc 800 a i erm emitter current (note 2) pulse (note 1) 1600 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 8300 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 6000 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 3500 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +125 c t stg storage temperature ? 55 ~ +125 c t psc short circuit pulse width v cc = 3200v, v ce v ces , v ge =15v, t j =125c 10 ? s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 10.0 i ces collector cutoff current v ce = v ces , v ge = 0v t j = 125c ? 10.0 ? ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 80 ma, t j = 25c 5.8 6.3 6.8 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? ? 0.5 a c ies input capacitance ? 117.0 ? nf c oes output capacitance ? 7.3 ? nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c ? 3.3 ? nf q g total gate charge v cc = 2800v, i c = 800a, v ge = 15v, t j = 25c ? 9.0 ? c t j = 25c ? 3.50 ? v cesat collector-emitter saturation voltage i c = 800 a (note 4) v ge = 15 v t j = 125c ? 4.40 5.10 v t j = 25c ? 1.00 ? t d(on) turn-on delay time t j = 125c ? 0.95 1.50 s t j = 25c ? 0.28 ? t r turn-on rise time t j = 125c ? 0.30 0.50 s t j = 25c ? 2.90 ? e on(10%) turn-on switching energy (note 5) t j = 125c ? 3.55 ? j t j = 25c ? 3.10 ? e on turn-on switching energy (note 6) v cc = 2800 v i c = 800 a v ge = 15 v r g(on) = 4.0 ? l s = 150 nh inductive load t j = 125c ? 3.80 ? j t j = 25c ? 3.60 ? t d(off) turn-off delay time t j = 125c ? 3.80 5.00 s t j = 25c ? 0.35 ? t f turn-off fall time t j = 125c ? 0.45 1.00 s t j = 25c ? 1.95 ? e off(10%) turn-off switching energy (note 5) t j = 125c ? 2.55 ? j t j = 25c ? 2.15 ? e off turn-off switching energy (note 6) v cc = 2800 v i c = 800 a v ge = 15 v r g(off) = 15 ? l s = 150 nh inductive load t j = 125c ? 2.85 ? j
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 2.50 ? v ec emitter-collector voltage (note 2) i e = 800 a (note 4) v ge = 0 v t j = 125c ? 2.80 3.40 v t j = 25c ? 0.70 ? t rr reverse recovery time (note 2) t j = 125c ? 0.90 ? s t j = 25c ? 780 ? i rr reverse recovery current (note 2) t j = 125c ? 850 ? a t j = 25c ? 660 ? q rr reverse recovery charge (note 2) t j = 125c ? 1000 ? c t j = 25c ? 0.85 ? e rec(10%) reverse recovery energy (note 2) (note 5) t j = 125c ? 1.35 ? j t j = 25c ? 1.00 ? e rec reverse recovery energy (note 2) (note 6) v cc = 2800 v i c = 800 a v ge = 15 v r g(on) = 4.0 ? l s = 150 nh inductive load t j = 125c ? 1.55 ? j thermal characteristics limits symbol item conditions min typ max unit r th(j-c)q junction to case, igbt part ? ? 15.0 k/kw r th(j-c)d thermal resistance junction to case, fwdi part ? ? 28.5 k/kw r th(c-s) contact thermal resistance case to heat sink, ? grease = 1w/m k, d (c-s) = 100 ? m ? 9.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 ? 22.0 nm m s m6 : mounting screw 3.0 ? 6.0 nm m t mounting torque m4 : auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 0.9 ? kg cti comparative tracking index 600 ? ? ? d a clearance 19.5 ? ? mm d s creepage distance 32.0 ? ? mm l p ce parasitic stray inductance ? 16.5 ? nh r cc?+ee? internal lead resistance t c = 25c ? 0.18 ? m ? r g internal gate resistance t c = 25c ? 2.5 ? ? ? note1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating. 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwd i ). 3. junction temperature (t j ) should not exceed t jmax rating (150c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 4 performance curves output characteristics (typical) 0 400 800 1200 1600 02468 collector - emitter voltage [v] collector current [a] v ge = 10v v ge = 11v v ge = 15v v ge = 13v t j = 25c v ge = 16v collector-emitter saturation voltag e characteristics (typical) 0 400 800 1200 1600 02468 collector-emitter saturation voltage [v] collector current [a] v ge = 15 v t j = 125c t j = 2 5c transfer characteristics (typical) 0 400 800 1200 1600 0 4 8 12 16 gate - emitter voltage [v] collector current [a] t j = 25c v ce = v ge t j = 125c free-wheel diode forward characteristics (typical) 0 400 800 1200 1600 012345 emitter-collector voltage [v] emitter current [a] t j = 25 c t j = 1 25 c
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 5 performance curves capacitance characteristics (typical) 1 10 100 1000 0.1 1 10 100 collector-emitter voltage [v] capacitance [nf] c ies v ge = 0v, tj = 25c f = 100 khz c oes c res half-bridge switching energy characteristics (typical) 0 2 4 6 8 10 0 400 800 1200 1600 collector current [a] switching energies [j] e rec v cc = 2 800v, v ge = 15v r g(on) = 4.0 ? , r g(off) = 15 ? l s = 150nh, tj = 125c indu ctive lo ad e of f e on gate charge characteristics (typical) -1 5 -1 0 -5 0 5 10 15 20 0246810 gate charge [c] gate-emitter voltage [v] v ce = 2800v, i c = 800a t j = 2 5c half-bridge switching energy characteristics (typical) 0 2 4 6 8 246810 gate resistor [ohm] switching energies [j] e rec v cc = 28 00v, i c = 800a v ge = 15 v, l s = 150 nh tj = 125c, inductive load e on
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 6 performance curves switching energy characteristics (typical) 0 2 4 6 8 10 15 20 25 30 gate resistor [ohm] switching energies [j] v cc = 2800v, i c = 80 0a v ge = 15v, l s = 1 50nh tj = 125c, ind uctive load e off free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] t rr i rr v cc = 2 800v, v ge = 15v r g(on) = 4.0 ? , l s = 150n h tj = 125c, indu ctive load half-bridge switching time characteristics (typical)half-bridge 0.01 0.1 1 10 100 100 1000 10000 collector current [a] switching times [s] v cc = 28 00v, v ge = 1 5v r g( on) = 4.0 ? , r g(off) = 1 5 ? l s = 150nh, tj = 125c inductive lo ad t r t d(on) t d(off) t f reverse bias safe operating area (rbsoa) 0 500 1000 1500 2000 2500 0 1000 2000 3000 4000 5000 collector-emitter voltage [v] collector current [a] v cc ? 32 00v, v ge = 1 5v tj = 125c, r g(off) = 15 ?
< hvigbt modules > CM800HC-90R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 7 performance curves short circuit safe operating area (scsoa) 0 2 4 6 8 10 0 1000 2000 3000 4000 5000 collector-emitter voltage [v] collector current [ka] v cc ? 3200v, v ge = 15 v tj = 125c, r g(on) = 4.0 ? , r g(off) = 15 ? transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 time [s] normalized transient thermal impedance rth(j-c)q = 15.0k/kw rth(j-c)d = 28.5k/kw free-wheel diode reverse recovery safe operating area (rrsoa) 0 500 1000 1500 2000 2500 0 1000 2000 3000 4000 5000 emitter-collector voltage [v] reverse recovery current [a] v cc ? 32 00v, di/dt < 4ka/s tj = 125c ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 rz i t n 1i i )cj(th )t( ? 1234 r i [k/kw] : 0.0096 0.1893 0.4044 0.3967 t i [sec] : 0.0001 0.0058 0.0602 0.3512
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